smd type ic www.kexin.com.cn 1 smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 pnp general purpose transistors BCF29,bcf30 features low current (max. 100 ma). low voltage (max. 32 v). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -32 v collector-emitter voltage v ceo -32 v emitter-base voltage v ebo -5 v collector current i c -100 ma peak collector current i cm -200 ma peak base current i bm -100 ma total power dissipation * p tot 250 mw storage temperature t stg -65to+150 junction temperature t j 150 operating ambient temperature r amb -65to+150 thermal resistance from junction to ambient * r th j-a 500 k/w * transistor mounted on an fr4 printed-circuit board.
www.kexin.com.cn 2 smd type ic smd type transistors BCF29,bcf30 h fe classification type BCF29 bcf30 marking c7p c8p electrical characteristics ta = 25 symbol testconditons min typ max unit i cbo i e =0;v cb = -32 v -100 na i cbo i e =0;v cb =-32v;t j =100 -10 a i ebo i c =0;v eb = -5 v -100 na BCF29 90 bcf30 150 BCF29 120 260 bcf30 215 500 i c =-10ma;i b = -0.5 ma -80 -300 mv i c =-50mv;i b = -2.5 ma -150 mv i c =-10ma;i b = -0.5 ma -720 mv i c =-50ma;i b = -2.5 ma -810 mv v be i c =-2ma;v ce = -5 v -600 -750 mv c c i e =ie=0;v cb =-10v;f=1mhz 4.5 pf f t i c =-10ma;v ce =-5v;f=100mhz 100 mhz nf i c =-200a;v ce =-5v;r s =2k; f = 1 khz; b = 200 hz 14db collector capacitance transition frequency noise figure base to emitter voltage base to emitter saturation voltage collector-emitter saturation voltage v be(sat) v ce(sat) dc current gain h fe i c =-2ma;v ce =-5v parameter collector cutoff current emitter cutoff current h fe dc current gain i c =-10a;v ce =-5v
|
